Transport properties of two-dimensional electron systems on silicon (111) surfaces

Abstract

We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and resistivity for the recently fabricated Si(111)-vacuum FET by using a semiclassical Boltzmann theory including screened charged impurity scattering. We find reasonable agreement with the corresponding experimental transport properties, indicating that the screened disorder potential from random charged impurities is the main scattering mechanism. We also find that the theoretical results with the valley degeneracy $g_v=2$ give much better agreement with experiment than the $g_v=6$ situation indicating that the usual bulk six-valley degeneracy of Si is lifted in this system.

arXiv comment4 pages, 2 figures

References in corpus (7)

• Metal-insulator transition in two-dimensional electron systems
• Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
• Resistivity of dilute 2D electrons in an undoped GaAs heterostructure
• The so-called two dimensional metal-insulator transition
• Metallicity and its low temperature behavior in dilute 2D carrier systems
• Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure
• High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

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• The effect of sublattice symmetry breaking on the electronic properties of a doped graphene
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• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Valley-dependent 2D transport in Si-MOSFETs
• Valley Degeneracies in (111) Silicon Quantum Wells