activity
19972008
most citedGiant microwave photoresistance of two-dimensional electron gas

209 citations · 715 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2008

Resistance Fluctuations in Composite Fermion State near Landau Level Filling Factor in A Square Quantum Well

Jian Zhang, R. R. Du, J. A. Simmons +1

We have studied the magnetotransport near Landau level filling factor in a GaAs-Al0.3Ga0.7As square quantum well (width 35 nm) in magnetic field up to 42 T and in a temper…

cond-mat.mes-hall2004★ 16 cited

Hysteresis in the quantum Hall regimes in electron double quantum well structures

W. Pan, J. L. Reno, J. A. Simmons

We present in this paper experimental results on the transport hysteresis in electron double quantum well structures. Exploring the measurement technique of fixing the magnetic fie…

cond-mat.mes-hall2004★ 64 cited

Observation of a node in the quantum oscillations induced by microwave radiation

Alexey E. Kovalev, Sergey A. Zvyagin, Clifford R. Bowers +2

The microwave induced magnetoresistance in GaAs/AlGaAs heterostructure was studied at temperatures below 1K and frequencies in the range of 150-400 GHz. A distinct node in the Shub…

cond-mat.mes-hall2003★ 22 cited

Oscillatory Magneto-Thermopower and Resonant Phonon Drag in a High-Mobility 2D Electron Gas

Jian Zhang, S. K. Lyo, R. R. Du +2

Experimental and theoretical evidence is presented for new low-magnetic-field ( kG) 1/B-oscillations in the thermoelectric power of a high-mobility GaAs/AlGaAs two-dimensional…

cond-mat.mes-hall2003★ 28 cited

Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

Hwayong Noh, M. P. Lilly, D. C. Tsui +3

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping…

cond-mat.mes-hall2002★ 104 cited

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

M. P. Lilly, J. L. Reno, J. A. Simmons +6

We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor…