Hysteresis in the quantum Hall regimes in electron double quantum well structures

Abstract

We present in this paper experimental results on the transport hysteresis in electron double quantum well structures. Exploring the measurement technique of fixing the magnetic field and sweeping a front gate voltage (Vg), we are able to study the hysteresis by varying the top layer Landau level fillings while maintaining a relatively constant filling factor in the bottom layer, allowing us to tackle the question of the sign of Rxx(up)-Rxx(down), where Rxx(up) is the magnetoresistance when Vg is swept up and Rxx(down) when Vg swept down. Furthermore, we observe that hysteresis is generally stronger in the even integer quantum Hall effect (IQHE) regime than in the odd-IQHE regime. This, we argue, is due to a larger energy gap for an even-IQHE state, determined by the Landau level separation, than that for an odd-IQHE state, determined by the Zeeman splitting.

References in corpus (3)

• Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
• Layer charge instability in unbalanced bilayer systems in the quantum Hall regime
• Coulomb Drag as a Probe of the Nature of Compressible States in a Magnetic Field

Cited by in corpus (7)

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• Dynamics of Density Imbalanced Bilayer Holes in the Quantum Hall Regime
• Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime
• Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates