Layer charge instability in unbalanced bilayer systems in the quantum Hall regime

Abstract

Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are apparently caused by instabilities in the charge distribution of the two layers.

4 pages, 4 figures

References in corpus (6)

• Large-q asymptotics of the random bond Potts model
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• First-Order Phase Transition in a Quantum Hall Ferromagnet
• Pseudospin Anisotropy Classification of Quantum Hall Ferromagnets
• A New Type of Electron Nuclear-Spin Interaction from Resistively Detected NMR in the Fractional Quantum Hall Effect Regime
• Quantum Hall Ferromagnetism in a Two-Dimensional Electron System

Cited by in corpus (11)

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• Self-consistent calculation of the electron distribution near a Quantum-Point Contact in the integer Quantum Hall Effect
• Realization of an Interacting Two-Valley AlAs Bilayer System
• Screening Model of Magnetotransport Hysteresis Observed in Bilayer Quantum Hall Systems
• Hysteresis in the quantum Hall regimes in electron double quantum well structures
• Pinning modes and interlayer correlation in high magnetic field bilayer Wigner solids
• Self-consistent Coulomb picture of an electron-electron bilayer system
• Hysteresis and spin phase transitions in quantum wires in the integer quantum Hall regime
• Charge metastability and hysteresis in the quantum Hall regime
• Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime
• Dynamics of Density Imbalanced Bilayer Holes in the Quantum Hall Regime