Realization of an Interacting Two-Valley AlAs Bilayer System

Abstract

By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors. Since the occupied valleys are at different X-points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacing. We demonstrate the realization of this system via magneto-transport measurements and the observation of a phase-coherent, bilayer $\nu$=1 quantum Hall state flanked by a reentrant insulating phase.

arXiv comment5 pages

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Cited by in corpus (10)

• Two-dimensional electrons occupying multiple valleys in AlAs
• Universal Quantum Computing with Spin and Valley
• Density dependent spin susceptibility and effective mass in interacting quasi-two dimensional electron systems
• Magnetoresistance and valley degree of freedom in bulk bismuth
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• Electron-Acoustic Phonon Energy Loss Rate in Multi-Component Electron Systems with Symmetric and Asymmetric Coupling Constants
• Interplay between Quantum Well Width and Interface Roughness for Electron Transport Mobility in GaAs Quantum Wells
• Synthesizing Coulombic superconductivity in van der Waals bilayers
• High-mobility AlAs quantum wells with out-of-plane valley occupation
• Zeeman splitting of interacting two-dimensional electrons with two effective masses