High-mobility AlAs quantum wells with out-of-plane valley occupation

Abstract

Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m${}^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the successful implementation of a novel technique utilizing thermally-induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8 m${}^2$/Vs.

arXiv comment3 pages, 3 figures, submitted for publication

References in corpus (4)

• Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator
• Realization of an Interacting Two-Valley AlAs Bilayer System
• Aluminum arsenide cleaved-edge overgrown quantum wires
• Zeeman splitting of interacting two-dimensional electrons with two effective masses

Cited by in corpus (4)

• Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system
• Effective mass suppression in a ferromagnetic two-dimensional electron liquid
• Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
• Valley degeneracy in biaxially strained aluminum arsenide quantum wells