Spontaneous spin polarization in doped semiconductor quantum wells
arXiv:cond-mat/0409752 · doi:10.1140/epjb/e2005-00159-6
Abstract
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We find that the existence of the ferromagnetic transition is dependent upon the choice of well width. We demonstrate rigorously that this dependence is governed by the interplay between different components of the exchange interaction and that there exists an upper limit for the well width beyond which there is no transition. We predict that some narrow quantum wells could exhibit this transition at electron densities lower than the ones that have been considered experimentally thus far. We use a screened Hartree-Fock approximation with a polarization-dependent effective mass, which is adjusted to match the critical density predicted by Monte Carlo calculations for the two-dimensional electron gas.
arXiv commentSubmitted to Eur. Phys. Journal B
References in corpus (9)
- Correlation energy and spin polarization in the 2D electron gas
- Zero Temperature Phases of the Electron Gas
- Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
- Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
- Interaction Corrections to Two-Dimensional Hole Transport in Large Limit
- Possible evidence of a spontaneous spin-polarization in mesoscopic 2D electron systems
- Spin-polarized stable phases of the 2-D electron fluid at finite temperatures
- Coulomb effects on the quantum transport of a two-dimensional electron system in periodic electric and magnetic fields
- Quasiparticle Effective Mass for the Two- and Three-Dimensional Electron Gas