396 citations · 1.3k across the 12 of their papers we have counts for
12 papers
Suppression of quasiparticle poisoning in transmon qubits by gap engineering
Plamen Kamenov, Thomas DiNapoli, Michael Gershenson +1
The performance of various superconducting devices operating at ultra-low temperatures is impaired by the presence of non-equilibrium quasiparticles. Inelastic quasiparticle (QP) t…
Probing spin susceptibility of a correlated two-dimensional electron system by transport and magnetization measurements
V. M. Pudalov, A. Yu. Kuntsevich, M. E. Gershenson +2
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibi…
Josephson Metamaterial with a widely tunable positive/negative Kerr constant
Wenyuan Zhang, W. Huang, M. E. Gershenson +1
We report on the microwave characterization of a novel one-dimensional Josephson metamaterial composed of a chain of asymmetric superconducting quantum interference devices (SQUIDs…
Light Quasiparticles Dominate Electronic Transport in Molecular Crystal Field-Effect Transistors
Z. Q. Li, V. Podzorov, N. Sai +4
We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that b…
Hall effect in the accumulation layers on the surface of organic semiconductors
V. Podzorov, E. Menard, J. A. Rogers +1
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing te…
Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
V. M. Pudalov, M. Gershenson, H. Kojima +5
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
V. M. Pudalov, M. E. Gershenson, H. Kojima +3
We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective…
Martensitic accommodation strain and the metal-insulator transition in manganites
V. Podzorov, B. G. Kim, V. Kiryukhin +2
In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibi…
The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
V. M. Pudalov, M. E. Gershenson, H. Kojima +5
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…
Electron-Assisted Hopping in Two Dimensions
M. E. Gershenson, Yu. B. Khavin, D. Reuter +2
We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concen…
Interaction effects and phase relaxation in disordered systems
I. L. Aleiner, B. L. Altshuler, M. E. Gershenson
This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization re…
Phase Relaxation of Electrons in Disordered Conductors
B. L. Altshuler, M. E. Gershenson, I. L. Aleiner
Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time can be or…