76 citations · 273 across the 8 of their papers we have counts for
8 papers
Density and well width dependences of the effective mass of twodimensional holes in (100) GaAs quantum wells measured by cyclotron resonance at microwave frequencies
H. Zhu, K. Lai, D. C. Tsui +5
Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DH's) in carbon-doped (100) GaAs/AlxGa1-xAs heterostructures. The…
Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
K. Lai, W. Pan, D. C. Tsui +3
In a high mobility two-dimensional electron system in Si, near the critical density, cm, of the apparent metal-to-insulator transition, the conductivi…
Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
K. Lai, T. M. Lu, W. Pan +6
We have investigated the valley splitting of two-dimensional electrons in high quality Si/SiGe heterostructures under tilted magnetic fields. For all the samples in our…
Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon
K. Lai, W. Pan, D. C. Tsui +3
We report here a systematic study of the energy gaps at the odd-integer quantum Hall states and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electr…
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
K. Lai, W. Pan, D. C. Tsui +3
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure wi…