activity
20002022
most citedDriving magnetic order in a manganite by ultrafast lattice excitation

153 citations · 449 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.str-el2022★ 12 cited

Bootstrapped Dimensional Crossover of a Spin Density Wave

Anjana M. Samarakoon, J. Strempfer, Junjie Zhang +8

Quantum materials display rich and myriad types of magnetic, electronic, and structural ordering, often with these ordering modes either competing with one another or 'intertwining…

cond-mat.str-el2015★ 6 cited

Investigation of ferromagnetic domain behavior and phase transition at nanoscale in bilayer manganites

C. Phatak, A. K. Petford-Long, H. Zheng +3

Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, ph…

cond-mat.str-el2013

Minority-spin states and the degree of spin polarization in ferromagnetic metallic LaSrMnO ()

Z. Sun, Q. Wang, J. F. Douglas +10

Using angle-resolved photoemission spectroscopy (ARPES), we investigate the electronic band structure and Fermi surface of ferromagnetic LaSrMnO (…

cond-mat.mtrl-sci2013★ 8 cited

Antiferromagnetic Domain Structure in Bilayer Manganite

M. García-Fernández, S. B. Wilkins, Ming Lu +5

We report a novel soft x-ray nanodiffraction study of antiferromagnetic domains in the strongly correlated bylayer manganite LaSrMnO. We find that the…

cond-mat.str-el2011★ 9 cited

Response of acoustic phonons to charge and orbital order in the 50\% doped bilayer manganite LaSrMnO

F. Weber, S. Rosenkranz, J. -P. Castellan +7

We report an inelastic neutron scattering study of acoustic phonons in the charge and orbitally ordered bilayer manganite LaSrMnO. For excitation energies less than $15…

cond-mat.str-el2011★ 153 cited

Driving magnetic order in a manganite by ultrafast lattice excitation

M. Först, R. I. Tobey, S. Wall +14

Optical control of magnetism, of interest for high-speed data processing and storage, has only been demonstrated with near-infrared excitation to date. However, in absorbing materi…

cond-mat.str-el2010

Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7

F. Weber, N. Aliouane, H. Zheng +3

Charge carriers in low-doped semiconductors may distort the atomic lattice and trap themselves forming so-called small polarons. High carrier concentrations can lead to short range…

cond-mat.str-el2007★ 21 cited

Surface effects on the orbital order in the single layered manganite La0.5Sr1.5MnO4

Y. Wakabayashi, M. H. Upton, S. Grenier +7

We report the first observation of `orbital truncation rods' -- the scattering arising from the termination of bulk orbital order at the surface of a crystal. The x-ray measurement…

cond-mat.str-el2005★ 81 cited

Full Bulk Spin Polarization and Intrinsic Tunnel Barriers at the Surface of Layered Manganites

J. W. Freeland, K. E. Gray, L. Ozyuzer +5

Transmission of information using the spin of the electron as well as its charge requires a high degree of spin polarization at surfaces. At surfaces however this degree of polariz…

cond-mat.str-el2000★ 112 cited

Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions

S. A. Vitkalov, Hairong Zheng, K. M. Mertes +2

For a broad range of electron densities and temperatures , the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto…

cond-mat.str-el2000★ 17 cited

Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field

S. A. Vitkalov, H. Zheng, K. M. Mertes +2

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is indepen…

cond-mat.str-el2000★ 30 cited

Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field

K. M. Mertes, Hairong Zheng, S. A. Vitkalov +2

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be full…