36 citations · 68 across the 6 of their papers we have counts for
6 papers
Effect of device design on charge offset drift in Si/SiO single electron devices
Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3
We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…
Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces
Binhui Hu, Mohamad M. Yazdanpanah, Joyce E. Coppock +1
We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole sy…
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
Binhui Hu, M. M. Yazdanpanah, B. E. Kane +2
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same…
Valley Degenerate 2D Electrons in the Lowest Landau Level
Tomasz M. Kott, Binhui Hu, S. H. Brown +1
We report low temperature magnetotransport measurements on a high mobility (μ=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field dat…
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Binhui Hu, Tomasz M. Kott, Robert N. McFarland +1
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied acr…
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
Binhui Hu, C. H. Yang
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quant…