36 citations · 68 across the 6 of their papers we have counts for
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cond-mat.mes-hall2012★ 36 cited
Valley Degenerate 2D Electrons in the Lowest Landau Level
Tomasz M. Kott, Binhui Hu, S. H. Brown +1
We report low temperature magnetotransport measurements on a high mobility (μ=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field dat…
cond-mat.mes-hall2012★ 9 cited
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Binhui Hu, Tomasz M. Kott, Robert N. McFarland +1
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied acr…