Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Abstract

We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes.

4 pages, 3 figures

References in corpus (5)

• Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice
• Engineering artificial graphene in a two-dimensional electron gas
• Making Massless Dirac Fermions from Patterned Two-Dimensional Electron Gases
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Geometric resonances in the magnetoresistance of hexagonal lateral superlattices

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• Microscopic origin of scalar potential induced topological transition in massive Dirac fermions and scalar Hall effect
• Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates