Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas
arXiv:2403.06426 · doi:10.1021/acs.nanolett.2c04358
Abstract
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties.
arXiv comment19 pages, 6 figures
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Cited by in corpus (6)
- Gate-tunable topological phases in superlattice modulated bilayer graphene
- Patterned bilayer graphene as a tunable, strongly correlated system
- Band gap formation in commensurate twisted bilayer graphene/hBN moiré lattices
- Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
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