Artificial Graphene: Unconventional Superconductivity in a Honeycomb Superlattice
arXiv:1909.07401 · doi:10.1103/PhysRevResearch.2.043155
Abstract
Artificial lattices have served as a platform to study the physics of unconventional superconductivity. We study semiconductor artificial graphene -- a honeycomb superlattice imposed on a semiconductor heterostructure -- which hosts the Dirac physics of graphene but with a tunable periodic potential strength and lattice spacing, allowing control of the strength of the electron-electron interactions. We demonstrate a new mechanism for superconductivity due to repulsive interactions which requires a strong lattice potential and a minimum doping away from the Dirac points. The mechanism relies on the Berry phase of the emergent Dirac fermions, which causes oppositely moving electron pairs near the Dirac points to interfere destructively, reducing the Coulomb repulsion and thereby giving rise to an effective attraction. The attractive component of the interaction is enhanced by a novel antiscreening effect which, in turn, increases with doping; as a result there is a minimum doping beyond which superconducting order generically ensues. The dominant superconducting state exhibits a spatially modulated gap with chiral -wave symmetry. Microscopic calculations suggest that the possible critical temperatures are large relative to the low carrier densities, for a range of experimentally realistic parameters.
References in corpus (37)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Paired states of fermions in two dimensions with breaking of parity and time-reversal symmetries, and the fractional quantum Hall effect
- Electronic transport in two dimensional graphene
- Dielectric function, screening, and plasmons in 2D graphene
- Dynamical polarization of graphene at finite doping
- Reflection symmetric second-order topological insulators and superconductors
- Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene
- Chiral superconductivity from repulsive interactions in doped graphene
- Superconducting states of pure and doped graphene
- Marginal Fermi liquid behavior from 2d Coulomb interaction
- Competing many-body instabilities and unconventional superconductivity in graphene
- Density waves and Cooper pairing on the honeycomb lattice
- Quantum critical point in graphene approached in the limit of infinitely strong Coulomb interaction
- Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice
- Engineering artificial graphene in a two-dimensional electron gas
- Making Massless Dirac Fermions from Patterned Two-Dimensional Electron Gases
- Boundary Green functions of topological insulators and superconductors
- Unconventional superconductivity on honeycomb lattice: the theory of Kekule order parameter
- Charge response function and a novel plasmon mode in graphene
- Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry
- Topological and holonomic quantum computation based on second-order topological superconductors
- Why does graphene behave as a weakly interacting system?
- Pairing in graphene: A quantum Monte Carlo study
- Superconductivity from repulsive interaction
- Correlated Dirac Particles and Superconductivity on the Honeycomb Lattice
- Electron-Electron Interactions in the Vacuum Polarization of Graphene
- Topological Insulating States in Laterally Patterned Ordinary Semiconductors
- Pairing in graphene-based moiré superlattices
- 1/N Expansion in Correlated Graphene
- Cooperon condensation and intra-valley pairing states in honeycomb Dirac systems
- Tuning the topological insulator states of artificial graphene
- Intra-valley Spin-triplet Superconducting Pairing in Lightly Doped Graphene
- Kekule versus hidden superconducting order in graphene-like systems: Competition and coexistence
- Chern insulating state in laterally patterned semiconductor heterostructures
- Two-dimensional topological semimetal state in a nanopatterned semiconductor system
- Superconductivity of strongly correlated electrons on the honeycomb lattice
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- Intrinsic first and higher-order topological superconductivity in a doped topological insulator
- Gate-tunable topological phases in superlattice modulated bilayer graphene
- Chiral and topological superconductivity in isospin polarized multilayer graphene
- Higher-order topological superconductors from Weyl semimetals
- Observation of flat bands in gated semiconductor artificial graphene
- Topological classification of intrinsic 3D superconductors using anomalous surface construction
- Quasiperiodic pairing in graphene quasicrystals
- Pair-density-wave superconductivity: a microscopic model on 2D honeycomb lattice
- Chaos-Assisted Dynamical Tunneling in Flat Band Superwires
- Higher-order topological superconductivity in monolayer WTe from repulsive interactions
- Edge and corner superconductivity in a 2D topological model
- Charge-pseudospin coupled diffusion in semi-Dirac graphene: pseudospin assisted valley transport
- Majorana corner states in an attractive quantum spin Hall insulator with opposite in-plane Zeeman energy at two sublattice sites
- Correlated physics in an artificial triangular anti-dot lattice
- Molecular dipoles in designer honeycomb lattices
- Displacement-field-tunable superconductivity in an inversion-symmetric twisted van der Waals heterostructure
- Hinge Majorana Flat Band in Type-II Dirac Semimetals
- Engineering Majorana corner modes from two-dimensional hexagonal crystals
- Anomalous gapped boundaries between surface topological orders in higher-order topological insulators and superconductors with inversion symmetry
- Theory of Topological Superconductivity in Doped IV-VI Semiconductors
- Artificial electrostatic crystals: a new platform for creating correlated quantum states
- Majorana bound states with chiral magnetic textures
- Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates