Alloying-induced topological transition in 2D transition-metal dichalcogenide semiconductors
arXiv:1806.02503 · doi:10.7567/1882-0786/ab03fe
Abstract
Research on two-dimensional (2D) topological insulators (TIs) is obstructed due to the lack of feasible approaches to growing 2D TIs in experiments. Through systematic first-principles calculations and tight-binding simulations, we propose that alloying Os in 2D MoX2 (X = S, Se, Te) monolayers is an effective approach to inducing semiconductor-to-TI transitions, with sizable nontrivial gaps of 25-37 meV. Analysis of the electronic structures reveals that the topological property mainly originates from the 5d orbitals of the Os atom. Furthermore, the TI gaps can be modulated by external biaxial strain.
References in corpus (24)
- Topological Insulators
- Atomically thin MoS2: A new direct-gap semiconductor
- Topological insulators and superconductors
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Order and the Quantum Spin Hall Effect
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- WannierTools: An open-source software package for novel topological materials
- Quantum Spin Hall Effect in Silicene
- Quantum Spin Hall Effect
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Time Reversal Polarization and a Z_2 Adiabatic Spin Pump
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
- Quantum spin Hall effect in three dimensional materials: Lattice computation of Z topological invariants and its application to Bi and Sb
- Spin-orbit engineering in transition metal dichalcogenide alloy monolayers
- Giant topological insulator gap in graphene with 5d adatoms
- Quantum Spin Hall Effect in 2D Transition Metal Dichalcogenide Haeckelites
- First-principles calculation of topological invariants Z2 within the FP-LAPW formalism
- Chern Half Metals: A New Class of Topological Materials to Realize the Quantum Anomalous Hall Effect