Influence of bulk inversion asymmetry on the magneto-optical spectrum of a HgTe topological insulator
arXiv:1309.5557 · doi:10.1103/PhysRevB.88.235309
Abstract
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological insulator, i.e., the quantum well with inverted band structure. It is found that this is the main contribution to the anti-crossing splitting observed in recent experimental magneto spectroscopic measurements. The relevant optical transitions involve different subbands, but the electron-electron interaction induced depolarization shift is found to be negligibly small. It is also found that the splitting of this anti-crossing only depends weakly on the tilting angle when the magnetic field is tilted away from the perpendicular direction to the quantum well. Thus, the strength of bulk inversion asymmetry can be determined via a direct comparison between the theoretical calculated one-electron energy levels and experimentally observed anti-crossing energy gap.
7 pages and 7 figures
References in corpus (12)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Floquet Topological Insulator in Semiconductor Quantum Wells
- The Quantum Spin Hall Effect: Theory and Experiment
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Topological Anderson Insulator
- Finite size effects of helical edge states in HgTe/CdTe quantum wells
- Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
- Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells
- Optical manipulation of edge state transport in HgTe quantum wells in the quantum hall regime
- Robust Level Coincidences in the Subband Structure of Quasi 2D Systems
- Resonant Subband Landau Level Coupling in Symmetric Quantum Well