Optical manipulation of edge state transport in HgTe quantum wells in the quantum hall regime

Abstract

We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter regime and the validity of the effective model is scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.

References in corpus (4)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• The Quantum Spin Hall Effect: Theory and Experiment
• Infrared spectroscopy of Landau levels in graphene
• Finite size effects of helical edge states in HgTe/CdTe quantum wells

Cited by in corpus (8)

• Spin-helical transport in normal and superconducting topological insulators
• Magnetic properties of HgTe quantum wells
• Photoexcitation of electron wave packets in quantum spin Hall edge states: effects of chiral anomaly from a localised electric pulse
• Helical edge states in multiple topological mass domains
• Interplay between Rashba interaction and electromagnetic field in the edge states of a 2D topological insulator
• Screening properties and plasmons of Hg(Cd)Te quantum wells
• Tunable spin-polarized edge transport in inverted quantum-well junctions
• Confinement versus interface bound states in spin-orbit coupled nanowires