Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

Abstract

We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.

5 pages

References in corpus (6)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Edge-mode Superconductivity in a Two Dimensional Topological Insulator
• Edge Transport in the Trivial Phase of InAs/GaSb
• Andreev reflection at the edge of a two-dimentional semimetal
• Conductance oscillations at the interface between a superconductor and the helical edge channel in a narrow HgTe quantum well
• Nonlocal Andreev reflection, fractional charge and current-phase relation in topological bilayer exciton condensate junctions