17 citations · 36 across the 7 of their papers we have counts for
7 papers
Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii +2
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined durin…
Kinetics of (2x4) -> (3x1(6)) structural changes on GaAs(001) surfaces during the UHV annealing
A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii
The peculiarities of superstructural transition (2x4) -> (3x1(6)) on the GaAs(001) surface were studied by the RHEED method in the conditions initiated by a sharp change of the ars…
Some aspects of diffracted waves formation at RHEED on a reconstructed crystal face
A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii
The evolution of RHEED reflexes intensity during reconstructed transitions characterizes (often implicitly) reconstructed surface state peculiarities. The approaches of a correct R…
Proximity-induced superconductivity within the InAs/GaSb edge conducting state
A. Kononov, V. A. Kostarev, B. R. Semyagin +4
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/…
Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
A. Kononov, S. V. Egorov, N. Titova +5
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quant…
Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
A. Kononov, S. V. Egorov, V. A. Kostarev +5
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double qu…
Kinetics of exciton photoluminescence in type-II semiconductor superlattices
L. S. Braginsky, M. Yu. Zaharov, A. M. Gilinsky +3
The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plan…