Two-dimensional electron gas in monolayer InN quantum wells

Abstract

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

References in corpus (6)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Low-temperature surface conduction in the Kondo insulator SmB${}_6$
• Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well