Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers

Abstract

While transition metal dichalcogenide (TMD) based moire materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now. In this work, using first principles calculations and continuum modeling, we reveal the displacement field induced topological moire bands in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley contrasting Chern bands with non-trivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum spin Hall and interaction induced quantum anomalous Hall effects.

6 pages, 6 figures. Accepted at PNAS

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• Quantum anomalous Hall effect from inverted charge transfer gap
• Spin-Orbit Coupling in Transition Metal Dichalcogenide Heterobilayer Flat Bands
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• Quantum anomalous Hall effect and electric-field-induced topological phase transition in AB-stacked MoTe${}_2$/WSe${}_2$ moiré heterobilayers
• Staggered Pseudo Magnetic Field in Twisted Transition Metal Dichalcogenides: Physical Origin and Experimental Consequences
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• Symmetric Wannier states and tight-binding model for quantum spin Hall bands in AB-stacked MoTe${}_2$/WSe${}_2$
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• Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors