Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

Abstract

Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of sub-dominant interaction parameters.

arXiv comment7 pages, 6 figures

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• Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice
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• Quasi-boson approximation yields accurate correlation energy in the 2D electron gas
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• Origin and stability of generalized Wigner crystallinity in triangular moiré systems
• Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers