Single Crystal Growth and Transport Properties of van der Waals Materials $AB$Te$_\mathbf{4}$ ($A/B$ = Ti, Zr, Hf)

Yuto Hasuo; Takahiro Urata; Masaaki Araidai; Yuji Tsuchiya; Satoshi Awaji; Hiroshi Ikuta

doi:10.7566/JPSJ.93.014705

paper

Single Crystal Growth and Transport Properties of van der Waals Materials $A B$ Te $_{4}$ ( $A / B$ = Ti, Zr, Hf)

arXiv:2401.02704 · doi:10.7566/JPSJ.93.014705

Abstract

Monolayers of $A B$ Te $_{4}$ ( $A$ / $B$ = Ti, Zr, Hf) were theoretically predicted to be two-dimensional topological insulators, but little has been known about the physical properties of these compounds. Here, we report on the single crystal growth, bulk transport properties, and band structure calculations of these compounds. The magnetotransport properties indicate that all three compounds are multi-carrier systems. The experimental results of ZrTiTe $_{4}$ and HfTiTe $_{4}$ can be well fitted by the multi-carrier formula assuming two types of carriers, while three carrier components were necessary for HfZrTe $_{4}$ . Interestingly, one of the carrier mobilities of HfZrTe $_{4}$ exceeded 1000 cm $^{2}$ V $^{- 1}$ s $^{- 1}$ , which was nearly one order in magnitude larger than the carrier mobilities of ZrTiTe $_{4}$ and HfTiTe $_{4}$ . Our band structure calculations showed that all three compounds are semimetals consistent with the magnetotransport properties. The band structure around the $Γ$ -point of HfZrTe $_{4}$ exhibits features that are distinct from the other two compounds, which is likely the reason of the different carrier properties.

Single Crystal Growth and Transport Properties of van der Waals Materials ABTe4​ (A/B = Ti, Zr, Hf)

Abstract

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Single Crystal Growth and Transport Properties of van der Waals Materials $A B$ Te $_{4}$ ( $A / B$ = Ti, Zr, Hf)