47 citations · 60 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2018★ 13 cited
A low-disorder Metal-Oxide-Silicon double quantum dot
Jin-Sung Kim, Thomas M. Hazard, Andrew A. Houck +1
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO interface which interferes with c…
cond-mat.mtrl-sci2016★ 47 cited
Annealing shallow Si/SiO interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
Jin-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO interface. Here we show that a fo…