Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Jin-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO${}_2$ interface. Here we show that a fo…