132 citations · 183 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2008★ 36 cited
A gate-defined silicon quantum dot molecule
H. W. Liu, T. Fujisawa, H. Inokawa +3
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable…
cond-mat.mes-hall2007★ 132 cited
Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
H. W. Liu, T. Fujisawa, Y. Ono +4
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoele…
cond-mat.other2006★ 15 cited
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi +6
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentrat…