33 citations · 57 across the 5 of their papers we have counts for
5 papers
A TEM study of Si-SiO2 interfaces in silicon nanodevices
Paul Spizzirri, Sergey Rubanov, Eric Gauja +3
The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device…
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…
Nano-Raman spectroscopy of silicon surfaces
P. G. Spizzirri, J. -H. Fang, S. Rubanov +2
Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques.…
Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
M. Mitic, K. D. Petersson, M. C. Cassidy +7
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists o…
Charge-based silicon quantum computer architectures using controlled single-ion implantation
A. S. Dzurak, L. C. L. Hollenberg, D. N. Jamieson +13
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qu…