Improved placement precision of implanted donor spin qubits in silicon using molecule ions
arXiv:2308.04117 · doi:10.1002/qute.202300316
Abstract
Donor spins in silicon-28 (Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF) molecule ions to produce high quality P donor qubits. Since F nuclei have a spin of , it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of s and a coherence time of s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits.
arXiv comment8 pages, 5 figures, 1 table
References in corpus (23)
- A single-atom electron spin qubit in silicon
- Single-shot readout of an electron spin in silicon
- Semiconductor Spin Qubits
- Electron spin coherence exceeding seconds in high purity silicon
- Storing quantum information for 30 seconds in a nanoelectronic device
- Computing with spin qubits at the surface code error threshold
- High-fidelity readout and control of a nuclear spin qubit in silicon
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
- Semiconductor Qubits In Practice
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Precision tomography of a three-qubit donor quantum processor in silicon
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Silicon quantum processor with robust long-distance qubit couplings
- Electron spin decoherence in isotope-enriched silicon
- Donor spins in silicon for quantum technologies
- Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
- Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
- Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
- Controllable freezing of the nuclear spin bath in a single-atom spin qubit
- High-fidelity adiabatic inversion of a electron spin qubit in natural silicon
- Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
- Isotopic enrichment of silicon by high fluence Si ion implantation