activity
20152026
most citedUniversal radiation tolerant semiconductor

107 citations · 316 across the 9 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2026

Effect of Near-surface Thermal Spikes on Radiation Hardness of Gallium Oxide

Tomás Fernández Bouvier, Umutcan Bektas, Alexander Azarov +10

Gallium oxide (GaO) stands out as an extraordinary high radiation-tolerant semiconductor, because its lattice displacements induce polymorph transitions, holding materi…

cond-mat.mtrl-sci2025★ 5 cited

Defect analysis of the - to -GaO phase transition

Umutcan Bektas, Maciej O. Liedke, Huan Liu +7

In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the to the phase, the role of defects during the transformation, an…

quant-ph2024★ 4 cited

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

M. Hollenbach, N. Klingner, P. Mazarov +8

Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the l…

physics.ins-det2023★ 1 cited

Roadmap for focused ion beam technologies

Katja Höflich, Gerhard Hobler, Frances I. Allen +29

The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was or…

cond-mat.mtrl-sci2023★ 107 cited

Universal radiation tolerant semiconductor

Alexander Azarov, Javier García Fernández, Junlei Zhao +10

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…

quant-ph2022★ 93 cited

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M. Hollenbach, N. Klingner, N. S. Jagtap +9

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and…

physics.app-ph2020★ 30 cited

Effects of Alloying Elements on Surface Oxides of Hot-Dip Galvanized Press Hardened Steel

Wolfgang Gaderbauer, Martin Arndt, Tia Truglas +5

Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various…

physics.ins-det2020★ 11 cited

Boron Liquid Metal Alloy Ion Sources For Special FIB Applications

Lothar Bischoff, Nico Klingner, Paul Mazarov +2

Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the…

physics.app-ph2019★ 11 cited

Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller +6

Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne beam. The morphological changes due to ion beam irradiation at room…

physics.ins-det2015★ 54 cited

Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry

Nico Klingner, René Heller, Gregor Hlawacek +4

Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resol…