activity
20052024
most citedWafer-scale nanofabrication of telecom single-photon emitters in silicon

93 citations · 217 across the 9 of their papers we have counts for

collaborators

9 papers

quant-ph2024★ 4 cited

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

M. Hollenbach, N. Klingner, P. Mazarov +8

Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the l…

physics.ins-det2023★ 1 cited

Roadmap for focused ion beam technologies

Katja Höflich, Gerhard Hobler, Frances I. Allen +29

The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was or…

quant-ph2022★ 93 cited

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M. Hollenbach, N. Klingner, N. S. Jagtap +9

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and…

physics.plasm-ph2020

Probing ultrafast laser plasma processes inside solids with resonant small-angle X-ray scattering

Lennart Gaus, Lothar Bischoff, Michael Bussmann +33

Extreme states of matter exist throughout the universe e.g. inside planetary cores, stars or astrophysical jets. Such conditions are generated in the laboratory in the interaction…

physics.ins-det2020★ 11 cited

Boron Liquid Metal Alloy Ion Sources For Special FIB Applications

Lothar Bischoff, Nico Klingner, Paul Mazarov +2

Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the…

cond-mat.mes-hall2019★ 15 cited

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Xiaomo Xu, Thomas Prüfer, Daniel Wolf +8

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite.…