Photochromism in a Hexagonal Boron Nitride Single Photon Emitter

Abstract

Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine irradiation-time dependent measures of quantum efficiency and microphotoluminescence ($\mu$PL) spectroscopy with two-color Hanbury Brown-Twiss interferometry to enable an investigation of the electronic structure of hBN defects. We identify photochromism in a hBN SPE that exhibits cross-correlations and correlated quantum efficiencies between the emission of its two zero-phonon lines.

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Cited by in corpus (4)

• Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride
• Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities
• Integration of hBN quantum emitters in monolithically fabricated waveguides
• Deterministic fabrication of blue quantum emitters in hexagonal boron nitride