111 citations · 302 across the 19 of their papers we have counts for
19 papers
Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…
Indium selenides for next-generation low-power computing devices
Seunguk Song, Michael Altvater, Wonchan Lee +3
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technol…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Two-step conversion of metal and metal oxide precursor films to 2D transition metal dichalcogenides and heterostructures
Michael Altvater, Christopher Muratore, Michael Snure +1
From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethor…
Probing interlayer interactions and commensurate-incommensurate transition in twisted bilayer graphene through Raman spectroscopy
Vineet Pandey, Subhendu Mishra, Nikhilesh Maity +8
Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relati…
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 C
Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim +12
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 C are currently non-existent and remains a critically unmet challenge in the development o…
Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures
Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens +12
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In…
Wafer-scale growth of two-dimensional, phase-pure InSe
Seunguk Song, Sungho Jeon, Mahfujur Rahaman +12
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from I…
Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal
Adam D. Alfieri, Michael J. Motala, Michael Snure +8
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesti…
High Density, Localized Quantum Emitters in Strained 2D Semiconductors
Gwangwoo Kim, Hyong Min Kim, Pawan Kumar +14
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced sing…
High throughput data-driven design of laser crystallized 2D MoS2 chemical sensors
Drake Austin, Paige Miesle, Deanna Sessions +19
High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic d…
2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density
Jinshui Miao, Chloe Leblanc, Xiwen Liu +7
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that e…
Scalable synthesis of 2D van der Waals superlattices
Michael J. Motala, Xiang Zhang, Pawan Kumar +23
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating het…
Synthesis and Tailored Properties Towards Designer Covalent Organic Framework Thin Films and Heterostructures
Lucas K. Beagle, Qiyi Fang, Ly D. Tran +4
Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true poten…
Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer
Eric W. Blanton, Michael J. Motala, Timothy A. Prusnick +7
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric veh…
Light-Matter Coupling in Scalable Van der Waals Superlattices
Pawan Kumar, Jason Lynch, Baokun Song +19
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in…
Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces
Kiyoung Jo, Pawan Kumar, Joseph Orr +10
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage…
Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer
Michael J. Motala, Eric Blanton, Al Hilton +8
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufac…