111 citations · 302 across the 19 of their papers we have counts for
3 papers · 1 filter
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…
Materials for High Temperature Digital Electronics
Dhiren K. Pradhan, David C. Moore, A. Matt Francis +5
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio…
Two-step conversion of metal and metal oxide precursor films to 2D transition metal dichalcogenides and heterostructures
Michael Altvater, Christopher Muratore, Michael Snure +1
From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethor…