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I. Paradisanos

27 papers hereh-index 191.1k citations39 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3
  • middle author17
  • last author3

Across the 23 of 27 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall12
  • cond-mat.mtrl-sci10
  • physics.optics4
  • cond-mat.quant-gas1
same name
  • I. Paradisanos — 10 papers, h 12
  • I. Paradisanos — 3 papers, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192026
most citedGiant Stark splitting of an exciton in bilayer MoS2​

138 citations · 892 across the 27 of their papers we have counts for

collaborators
Showing 2022Show all

3 papers · 1 filter

physics.optics2022★ 9 cited

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha +10

Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically ac…

cond-mat.mtrl-sci2022★ 62 cited

One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real +13

We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to t…

cond-mat.mtrl-sci2022★ 37 cited

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Dorian Beret, Ioannis Paradisanos, Ziyang Gan +17

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier…

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