2.3k citations · 5.3k across the 23 of their papers we have counts for
22 papers
Proton Collective Quantum Tunneling Induces Anomalous Thermal Conductivity of Ice under Pressure
Yufeng Wang, Ripeng Luo, Jian Chen +6
Proton tunneling is believed to be non-local in ice but has never been shown experimentally. Here we measured thermal conductivity of ice under pressure up to 50 GPa and found it t…
Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
Edy Cardona, Matthew K. Horton, Daniel Paulo-Wach +6
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-pe…
Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires
Jingang Li, Rundi Yang, Yoonsoo Rho +5
Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications.…
Incoherent phonon transport dominates heat conduction across van der Waals superlattices
Lu Zhao, Lijuan Zhang, Houfu Song +5
Heat conduction mechanisms in superlattices could be different across different types of interfaces. Van der Waals superlattices are structures physically assembled through weak va…
Charge Carrier Transport in Iron Pyrite Thin Films: Disorder Induced Variable Range Hopping
Sudhanshu Shukla, Sinu Mathew, Hwan Sung Choe +8
The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurement…
Nanoscale-femtosecond dielectric response of Mott insulators captured by two-colour near-field ultrafast electron microscopy
Xuewen Fu, Francesco Barantani, Simone Gargiulo +8
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting play…
Chemical trends of deep levels in van der Waals semiconductors
Penghong Ci, Xuezeng Tian, Jun Kang +11
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no e…
Synthesis and electronic structure characterization of diamane
Feng Ke, Lingkong Zhang, Yabin Chen +13
Atomically thin graphite, known as graphene, has been a marvel in material science because of its exceptional properties, novel physics and promising applications. Atomically thin…
Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy
Yabin Chen, Chaoyu Chen, Robert Kealhofer +18
Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and…
Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling
Flavio Giorgianni, Carlo Vicario, Mostafa Shalaby +4
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be t…
Pressure-Temperature Phase Diagram of Vanadium Dioxide
Yabin Chen, Shuai Zhang, Feng Ke +8
The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind…
Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell
Yabin Chen, Feng Ke, Penghong Ci +10
Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Indepe…
Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2
Drew W. Latzke, Wentao Zhang, Aslihan Suslu +7
We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with…
Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
Xiaoping Hong, Jonghwan Kim, Su-Fei Shi +7
Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including grap…
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
Kai Liu, Qimin Yan, Michelle Chen +10
Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components…
Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices
Zhiwen Shi, Chenhao Jin, Wei Yang +13
Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phe…
Mechanically Modulated Tunneling Resistance in Monolayer MoS2
Deyi Fu, Jian Zhou, Sefaattin Tongay +4
We report on the modulation of tunneling resistance in MoS2 monolayers by nano-indentation using an atomic force microscope (AFM). The resistance between the conductive AFM tip and…
Temperature Gated Thermal Rectifier
Jia Zhu, Kedar Hippalgaonkar, Sheng Shen +5
Heat flow control is essential for widespread applications of heating, cooling, energy conversion and utilization. Here we demonstrate the first observation of temperature-gated th…
Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
H. Sahin, S. Tongay, S. Horzum +5
Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are deg…
Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric
Shamashis Sengupta, Kevin Wang, Kai Liu +4
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal tr…
Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams
J. Cao, E. Ertekin, V. Srinivasan +8
Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially contro…
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
S. X. Li, E. E. Haller, K. M. Yu +6
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift…