Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

Abstract

The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures.

arXiv comment17 pages, 4 figures

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Cited by in corpus (6)

• Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy
• Observation of nonlinear planar Hall effect in magnetic insulator/topological insulator heterostructures
• Gate-tunable anomalous Hall effect in a 3D topological insulator/2D magnet van der Waals heterostructure
• Interface Engineering Enabled Low Temperature Growth of Magnetic Insulator on Topological Insulator