Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe${}_2$ ultrathin films

Abstract

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and interstitial, respectively. By means of scanning tunneling microscopy, we demonstrate that the well-established charge density waves can survive in single unit-cell (one triple layer) regime, and find a gradual reduction in their correlation length as the density of surface defects in TiSe2 ultrathin films increases. Our findings offer important insights into the nature of charge density wave in TiSe2, and also pave a material foundation for potential applications based on the collective electronic states.

5 pages, 4 figures

References in corpus (5)

• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• Evidence for an excitonic insulator phase in 1T-TiSe${}_2$
• Doping nature of native defects in 1T-TiSe2
• Electronic correlations stabilizing time-reversal broken chiral superconductivity in single-trilayer TiSe${}_2$
• Surface Charge Density Wave Transition in NbSe${}_3$

Cited by in corpus (9)

• Quasiparticle energy bands and Fermi surfaces of monolayer NbSe${}_2$
• Nontrivial doping evolution of electronic properties in Ising-superconducting alloys
• Raman spectroscopy of optical phonon and incommensurate charge density wave modes in 2H-TaSe2 exfoliated flakes
• Electron correlations rule the phonon-driven instability in single layer TiSe${}_2$
• Charge density waves and Fermi level pinning in monolayer and bilayer SnSe${}_2$
• Self-assembled nano-columns in Bi2Se3 grown by molecular beam epitaxy
• Topological theory of inversion-breaking charge-density-wave monolayer 1\textit{T}-TiSe${}_2$
• Chiral charge density wave and backscattering-immune orbital texture in monolayer 1T-TiTe2
• Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials