Doping nature of native defects in 1T-TiSe2
arXiv:1403.7339 · doi:10.1103/PhysRevLett.112.197001
Abstract
The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen.
arXiv comment5 pages, 3 figures
References in corpus (7)
- Superconductivity in Cu_xTiSe_2
- Evidence for an excitonic insulator phase in 1T-TiSe
- Atomically precise placement of single dopants in Si
- Spontaneous exciton condensation in 1T-TiSe2: a BCS-like approach
- Surface Scattering via Bulk Continuum States in the 3D Topological Insulator BiSe
- STM imaging of impurity resonances on BiSe
- Band structure related wave function symmetry of amphoteric Si dopants in GaAs
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