Doping nature of native defects in 1T-TiSe2

Abstract

The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen.

5 pages, 3 figures

References in corpus (3)

• Evidence for an excitonic insulator phase in 1T-TiSe${}_2$
• Spontaneous exciton condensation in 1T-TiSe2: a BCS-like approach
• Band structure related wave function symmetry of amphoteric Si dopants in GaAs

Cited by in corpus (12)

• How Substitutional Point Defects in Two-Dimensional WS${}_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
• Influence of domain walls in the incommensurate charge density wave state of Cu intercalated 1$T$-TiSe${}_2$
• Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe${}_2$ ultrathin films
• Stripe and short range order in the charge density wave of 1T-Cu${}_x$TiSe${}_2$
• The Role of Transport Agents in MoS2 Single Crystals
• On the origin of the anomalous peak in the resistivity of TiSe${}_2$
• Dramatic Plasmon Response to the Charge-Density-Wave Gap Development in $1\text{T}-{\mathrm{TiSe}}_2$
• Local resilience of the $1T$-TiSe${}_2$ charge density wave to Ti self-doping
• Perturbation of charge density waves in 1T-TiSe${}_2$
• Carrier-Density Control of the Quantum-Confined 1$T$-TiSe${}_2$ Charge-Density-Wave
• Cluster charge-density-wave glass in hydrogen-intercalated TiSe${}_2$
• Building bridges: matching density functional theory with experiment