most citedEpitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

217 citations · 358 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci201181 cited

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Matthew Brahlek, Yong Seung Kim, Namrata Bansal +2

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi…

cond-mat.mtrl-sci201116 cited

Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment

Yong-Seung Kim, Namrata Bansal, Seongshik Oh

Source oxidation of easily oxidizing elements such as Ca, Sr, Ba, and Ti in an oxidizing ambient leads to their flux instability and is one of the biggest problems in the multi-ele…

cond-mat.mtrl-sci2011217 cited

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Namrata Bansal, Yong Seung Kim, Eliav Edrey +10

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…

cond-mat.mtrl-sci201117 cited

Crucible aperture: an effective way to reduce source oxidation in oxide molecular beam epitaxy process

Yong-Seung Kim, Namrata Bansal, Seongshik Oh

Growing multi-elemental complex-oxide structures using an MBE (Molecular Beam Epitaxy) technique requires precise control of each source flux. However, when the component elements…

cond-mat.mtrl-sci201127 cited

Sr flux stability against oxidation in oxide-MBE environment: flux, geometry, and pressure dependence

Y. S. Kim, Namrata Bansal, Carlos Chaparro +2

Maintaining stable fluxes for multiple source elements is a challenging task when the source materials have significantly different oxygen affinities in a complex-oxide molecular-b…