Bulk Saturable absorption in Topological Insulator thin Films

Abstract

We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconclusive in establishing whether the saturable absorption is coming from surface states or the bulk. Specifically designed experiments with magnetically doped TI samples allow us to attribute the saturable absorption characteristic of TI to the bulk states. Detailed experimental procedures and possible explanation of observed results have been discussed.

References in corpus (5)

• Topological Insulators with Inversion Symmetry
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Surface quantized anomalous Hall current and magneto-electric effect in magnetically disordered topological insulators
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