Photo-Seebeck effect in single-crystalline bismuth telluride topological insulator
arXiv:2004.03664 · doi:10.1063/1.5143988
Abstract
Bismuth telluride is a low energy bulk band-gap topological system with conducting surface states. Besides its very good thermoelectric properties, it also makes a very good candidate for broadband photodetectors. Here, we report temperature-dependent photo-Seebeck effect in a bulk single crystalline bismuth telluride. On light illumination, an electrically biased sample shows distinguishable contributions in the measured current due to both the Seebeck effect and the normal photo-generated carriers within a narrow layer of the sample. Detailed experiments are performed to elucidate the distinction between the Seebeck contribution and the photogenerated current. The temperature-dependence of the photocurrent without Seebeck contribution shows a sign reversal from negative to positive at a specific temperature depending on the wavelength of photoexcitation light.
References in corpus (9)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Topological Field Theory of Time-Reversal Invariant Insulators
- Photocurrent generation with two-dimensional van der Waals semiconductors
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Photoconductivity of biased graphene
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Intrinsic conduction through topological surface states of insulating BiTe epitaxial thin films