Linear magneto-resistance versus weak antilocalization effects in Bi${}_2$Te${}_3$ films

Abstract

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect which generally persists to high fields and high temperatures. We have studied the MR of topological insulator Bi2Te3 films from the metallic to semiconducting transport regime. While in metallic samples, the WAL is difficult to identify due to the smallness of the WAL compared to the samples' conductivity, the sharp WAL dip in the MR is clearly present in the samples with higher resistivity. To correctly account for the low field MR by the quantitative theory of WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be separated from the WAL quantum correction. Otherwise the WAL fitting alone yields an unrealistically large coefficient $\alpha$ in the HLN analysis.

References in corpus (8)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Weak localisation magnetoresistance and valley symmetry in graphene
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films
• Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
• Linear magnetoresistance on the topological surface

Cited by in corpus (7)

• Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe${}_2$
• Electron-Phonon Coupling and Quantum Correction to Topological Magnetoconductivity in Bi2GeTe4
• Comprehensive Analysis for the High Field Magneto-conductivity of Bi2Te3 Single Crystal
• Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi${}_2$Te${}_3$
• Magneto-transport and Berry phase in magnetically doped Bi${}_{0.97-x}$Sb${}_{0.03}$ single crystals
• Effects of disorder on the quantum transport properties in topologically nontrivial metal PbTaSe${}_2$
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States