Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy

Abstract

We report that thin films of a prototype topological insulator, Bi${}_2$Se${}_3$, can be epitaxially grown onto the (0001) surface of BaFe${}_{12}$O${}_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi${}_2$Se${}_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi${}_2$Se${}_3$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi${}_2$Se${}_3$/BaM interface.

5 pages, 5 figures, supplemental material available upon request or visit the APL website

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Cited by in corpus (4)

• Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator
• Dirac-Electrons-Mediated Magnetic Proximity Effect in Topological Insulator / Magnetic Insulator Heterostructures
• The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure
• Determination of Out-of-plane Spin Polarization of Topological Surface States by Spin Hall Effect Tunneling Spectroscopy