Signature of surface state coupling in thin films of the topological Kondo insulator SmB${}_6$ from anisotropic magnetoresistance

Abstract

The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB${}_6$ thin films are reported. We find that the AMR changes sign from negative (${\rho }_{||}<{\rho }_{\perp }$) at high temperatures to positive (${\rho }_{||}>{\rho }_{\perp }$) at low temperatures. The temperature, T${}_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T${}_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.

arXiv comment8 pages, 11 figures

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• Topological Kondo Insulators
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Cited by in corpus (4)

• Planar Hall effect with sixfold oscillations in a Dirac antiperovskite
• Surface-induced positive planar Hall effect in topological Kondo insulator SmB6 microribbons
• Electrical properties of SmB${}_6$ thin films prepared by pulsed laser deposition from a stoichiometric SmB${}_6$ target
• Low temperature resistivity studies of SmB6: Observation of twodimensional variable-range hopping conductivity