Signature of surface state coupling in thin films of the topological Kondo insulator SmB${}_6$ from anisotropic magnetoresistance

Abstract

The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB${}_6$ thin films are reported. We find that the AMR changes sign from negative (${\rho }_{||}<{\rho }_{\perp }$) at high temperatures to positive (${\rho }_{||}>{\rho }_{\perp }$) at low temperatures. The temperature, T${}_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T${}_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.

8 pages, 11 figures

References in corpus (6)

• Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6
• Tuning bulk and surface conduction in topological Kondo insulator SmB6
• Kondo Breakdown in Topological Kondo Insulators
• Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films
• Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
• Spin-polarized tunneling current through a thin film of topological insulator in a parallel magnetic field

Cited by in corpus (4)

• Planar Hall effect with sixfold oscillations in a Dirac antiperovskite
• Surface-induced positive planar Hall effect in topological Kondo insulator SmB6 microribbons
• Electrical properties of SmB${}_6$ thin films prepared by pulsed laser deposition from a stoichiometric SmB${}_6$ target
• Low temperature resistivity studies of SmB6: Observation of twodimensional variable-range hopping conductivity