Stacked topological insulator built from bismuth-based graphene sheet analogues

Abstract

Commonly materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators (TIs) in 2005 has fundamentally challenged this dichotomy. In a TI, spin-orbit interaction generates a non-trivial topology of the electronic band-structure dictating that its bulk is perfectly insulating, while its surface is fully conducting. The first TI candidate material put forward -graphene- is of limited practical use since its weak spin-orbit interactions produce a band-gap of ~0.01K. Recent reinvestigation of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional TI's. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional TI's: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogs, but with a honeycomb net composed of RhBi8-cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a TI with a 2400K band-gap.

10 pages, 3 figures

References in corpus (9)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
• Topological Insulators with Inversion Symmetry
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
• The Helical Liquid and the Edge of Quantum Spin Hall Systems
• Electrically detected interferometry of Majorana fermions in a topological insulator