Topological end states due to inhomogeneous strains in wrinkled semiconducting ribbons

Abstract

We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and non-trivial insulating phases by varying its real space geometry.

5 pages, 4 figures

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Cited by in corpus (5)

• Electronic materials with nanoscale curved geometries
• Topological Mirror Insulators in One Dimension
• A topological quantum pump in serpentine-shaped semiconducting narrow channels
• Hinge Modes and Surface States in Second-Order Topological Three-Dimensional Quantum Hall Systems induced by Charge Density Modulation
• Angle-dependent Weiss oscillations in a nanocorrugated two-dimensional electron gas