Curvature-induced geometric potential in strain-driven nanostructures

Abstract

We derive the effective dimensionally reduced Schödinger equation for electrons in strain-driven curved nanostructures by adiabatic separation of fast and slow quantum degrees of freedom. The emergent strain-induced geometric potential strongly renormalizes the purely quantum curvature-induced potential and enhances the effects of curvature by several orders of magnitude. Applying this analysis to nanocorrugated films shows that this curvature-induced potential leads to strongly enhanced electron localization and the opening of substantial band gaps.

4 pages, 3 figures

References in corpus (3)

• Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
• Quantum mechanics on curved 2D systems with electric and magnetic fields
• Bending and wrinkling as competing relaxation pathways for strained free-hanging films

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