Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

Abstract

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.

13 pages, 8 figures

References in corpus (6)

• Quantum mechanics on curved 2D systems with electric and magnetic fields
• Cylindrical Two-Dimensional Electron Gas in a Transverse Magnetic Field
• Quantum transport in a curved one-dimensional quantum wire with spin-orbit interactions
• Curvature effects on surface electron states in ballistic nanostructures
• Effect of conformations on charge transport in a thin elastic tube
• Curvature induced quantum potential on deformed surfaces

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