Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTeSe
arXiv:2106.04035 · doi:10.1088/1367-2630/ac2712
Abstract
Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTeSe. The band structure of bulk ZrTeSe can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7\% tensile strain. Meanwhile, the Z invariants (0; 110) demonstrate conclusively it is a weak topological insulator (WTI). The two Dirac cones for the (001) surface further confirm the nontrivial topological nature. The single-layer ZrTeSe is a quantum spin Hall (QSH) insulator with a band gap 86.4 meV and Z=1, the nontrivial metallic edge states further confirm the nontrivial topological nature. The maximum global band gap is 0.211 eV at the tensile strain 8\%. When the compressive strain is more than 1\%, the band structure of single-layer ZrTeSe produces a TI-to-semimetal transition. These theoretical analysis may provide a method for searching large band gap TIs and platform for topological nanoelectronic device applications.
13 pages,8 figures
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